Secondary-ion mass spectroscopy (SIMS) investigations of Be and Si incorporation in GaN grown by molecular beam epitaxy (MBE)-Reference-Cited by-同舟云学术

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Secondary-ion mass spectroscopy (SIMS) investigations of Be and Si incorporation in GaN grown by molecular beam epitaxy (MBE)

Published:1996-04-01 Issue:4 Volume:11 Page:538-541
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Cheng T S,Foxon C T,Jenkins L C,Hooper S E,Lacklison D E,Orton J W,Ber B Ya,Merkulov A V,Novikov S V

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

3. High-Power GaN P-N Junction Blue-Light-Emitting Diodes

4. Growth and Doping of GaN Films by ECR-Assisted MBE

5. p‐type zinc‐blende GaN on GaAs substrates

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Understanding Si adsorption on GaN(0001) surfaces using first-principles calculations;Physical Review B;2006-05-09

2. Be diffusion in GaN;Materials Characterization;2002-11

3. The doping process and dopant characteristics of GaN;Journal of Physics: Condensed Matter;2002-05-24

4. First-principles studies of beryllium doping of GaN;Physical Review B;2001-06-08

5. Donor-hydrogen bound exciton in epitaxial GaN;Physical Review B;1999-12-15

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