Be diffusion in GaN-Reference-Cited by-同舟云学术

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Be diffusion in GaN

Published:2002-11 Issue:4 Volume:49 Page:337-341
ISSN:1044-5803
Container-title:Materials Characterization
language:en
Short-container-title:Materials Characterization

Author:

Chang S.J.,Lai W.C.,Chen J.F.,Chen S.C.,Huang B.R.,Liu C.H.,Liaw U.H.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference36 articles.

1. Large-band-gap SiC, III–V nitride, and II–VI ZnSe-based semiconductor device technologies;Morkoc;J. Appl. Phys.,1994

2. GaN p–n junction diode formed by Si ion implantation into p-GaN;Lee;Solid State Electron,2002

3. Planar GaN n+–p photodetectors formed by Si implants into p-GaN;Sheu;Appl. Phys. Lett.,2002

4. InGaN/GaN MQW P–N junction photodetectors;Chiou;Solid State Electron,2002

5. p-Type zinc-blend GaN on GaAs substrates;Lin;Appl. Phys. Lett.,1993

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1. Investigation of diffusion mechanism of beryllium in GaN;Physica B: Condensed Matter;2020-10

2. Characterization of nitride-based LED materials and devices using TOF-SIMS;Surface and Interface Analysis;2014-08-07

3. Migration kinetics of ion-implanted beryllium in ZnO and GaN;Physica Scripta;2013-08-22

4. Characteristics of an AlGaInP-Based Light Emitting Diode With an Indium-Tin-Oxide (ITO) Direct Ohmic Contact Structure;IEEE Journal of Quantum Electronics;2010-02

5. Time-dependent density functional theory study on optical properties of GaN doped with alkaline-earth atom;Journal of Molecular Structure: THEOCHEM;2009-04

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