Migration kinetics of ion-implanted beryllium in ZnO and GaN-Reference-Cited by-同舟云学术

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Migration kinetics of ion-implanted beryllium in ZnO and GaN

Published:2013-08-22 Issue:3 Volume:88 Page:035603
ISSN:0031-8949
Container-title:Physica Scripta
language:
Short-container-title:Phys. Scr.

Author:

Koskelo O,Köster U,Tuomisto F,Helariutta K,Sopanen M,Suihkonen S,Svensk O,Räisänen J

Publisher

IOP Publishing

Subject

Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics

Link

http://stacks.iop.org/1402-4896/88/i=3/a=035603/pdf

Reference43 articles.

1. ZnO devices: Photodiodes and p-type field-effect transistors

2. A comprehensive review of ZnO materials and devices

3. Structural and optical properties of Be-doped ZnO nanocrystalline films by pulsed laser deposition

4. Wide-band gap oxide alloy: BeZnO

5. Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal annealing of GaN implanted with Be;Journal of Applied Physics;2022-03-28

2. Investigation of diffusion mechanism of beryllium in GaN;Physica B: Condensed Matter;2020-10

3. Lattice sites of implanted Na in GaN and AlN in comparison to other light alkalis and alkaline earths;Journal of Applied Physics;2020-07-28

4. Preparation and characterization of three 7 Be targets for the measurement of the 7 Be(n, p) 7 Li and 7 Be(n,α) 7 Li reaction cross sections;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2018-05

5. Lattice site specific diffusion properties for substitutional and interstitial impurity atoms in ZnO crystals;Journal of Applied Physics;2016-09-21

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