Lattice sites of implanted Na in GaN and AlN in comparison to other light alkalis and alkaline earths-Reference-Cited by-同舟云学术

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Lattice sites of implanted Na in GaN and AlN in comparison to other light alkalis and alkaline earths

Published:2020-07-28 Issue:4 Volume:128 Page:045703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wahl U.¹²^ORCID,David-Bosne E.²^ORCID,Amorim L. M.¹,Costa A. R. G.²^ORCID,De Vries B.¹,Correia J. G.²^ORCID,da Silva M. R.³^ORCID,Pereira L. M. C.¹^ORCID,Vantomme A.¹^ORCID

Affiliation:

1. KU Leuven, Instituut voor Kern- en Stralingsfysica, 3001 Leuven, Belgium

2. Centro de Ciências e Tecnologias Nucleares, Departamento de Engenharia e Ciências Nucleares, Instituto Superior Técnico, Universidade de Lisboa, 2695-066 Bobadela LRS, Portugal

3. CICECO, Institute of Materials, Universidade de Aveiro, 13810-193 Aveiro, Portugal

Funder

Fundação para a Ciência e a Tecnologia

Fonds Wetenschappelijk Onderzoek

Onderzoeksraad, KU Leuven

European Commission

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0009653

Reference53 articles.

1. Photoluminescence of ion‐implanted GaN

2. Luminescence properties of defects in GaN

3. Recent progress of Na-flux method for GaN crystal growth

4. Gallium nitride bulk crystal growth processes: A review

5. Properties of the state of the art of bulk III–V nitride substrates and homoepitaxial layers

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nuclear magnetic resonance of Li8 ions implanted in ZnO;Physical Review B;2022-07-25

2. Direct evidence of Be as an amphoteric dopant in GaN;Physical Review B;2022-05-27

3. A review of ultrawide bandgap materials: properties, synthesis and devices;Oxford Open Materials Science;2022

4. Influence of (Li/Na/K) doping and point defect (VAl, Hi) on the magnetic and photocatalytic performance of AlN: A first-principles study;Materials Chemistry and Physics;2021-08

5. Lattice Location Studies of the Amphoteric Nature of Implanted Mg in GaN;Advanced Electronic Materials;2021-06-19

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