Characterization of tungsten–nickel simultaneous Ohmic contacts to p- and n-type 4H-SiC-Reference-Cited by-同舟云学术

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Characterization of tungsten–nickel simultaneous Ohmic contacts to p- and n-type 4H-SiC

Published:2015-09-01 Issue:10 Volume:30 Page:105019
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kragh-Buetow K C,Okojie R S,Lukco D,Mohney S E

Funder

NASA Space Technology Research Fellowship

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=10/a=105019/pdf

Reference45 articles.

1. A critical review of ohmic and rectifying contacts for silicon carbide

2. Material Selection and Interfacial Reaction in Ohmic-Contact Formation on SiC

3. Mechanisms of current flow in metal-semiconductor ohmic contacts

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of the deposition sequence of Ti and W on the Ni-based Ohmic contacts to n-type 4H-SiC;Materials Today Communications;2024-08

2. Self-aligned contacts to ion implanted S/D regions in 4H-SiC;Materials Science in Semiconductor Processing;2023-12

3. Role of Ti and W in the Ni-based ohmic contacts to n-type 4H-SiC;Journal of Crystal Growth;2023-07

4. Annealing temperature dependent properties for Ni/Ti/W Ohmic contacts simultaneously formed on n- and p-type 4H-SiC;Semiconductor Science and Technology;2023-06-05

5. Research status and progress of metal contacts of SiC power devices;Acta Physica Sinica;2021

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