Growth of III-V compounds on vicinal planes by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Growth of III-V compounds on vicinal planes by molecular beam epitaxy

Published:1990-12-01 Issue:12 Volume:5 Page:1147-1154
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Joyce B A,Neave J H,Zhang J,Vvedensky D D,Clarke S,Hugill K J,Shitara T,Myers-Beaghton A K

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/5/i=12/a=001/pdf

Reference27 articles.

1. Reflection high‐energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements

2. Origin of Reflection High-Energy Electron-Diffraction Intensity Oscillations during Molecular-Beam Epitaxy: A Computational Modeling Approach

3. Structure of AlAs‐GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy

4. (AlAs)0.5(GaAs)0.5fractional‐layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor deposition

5. Dynamics of film growth of GaAs by MBE from Rheed observations

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4. Effect of (100) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs;Journal of Crystal Growth;2014-04

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