Effects of incident UV light on the surface morphology of MBE grown GaAs-Reference-Cited by-同舟云学术

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Effects of incident UV light on the surface morphology of MBE grown GaAs

Published:2015-03 Issue: Volume:413 Page:76-80
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Beaton Daniel A.,Sanders C.,Alberi K.

Funder

Department of Energy Office of Science, Basic Energy Sciences

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. The stabilization of metastable phases by epitaxy

2. Molecular beam epitaxy growth of GaAs1−xBix

3. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

4. Growth and phase stability of epitaxial metastable InSb1−xBixfilms on GaAs. I. Crystal growth

5. Ion–surface interactions during vapor phase crystal growth by sputtering, MBE, and plasma‐enhanced CVD: Applications to semiconductors

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1. High Mobility Cd₃As₂(112) on GaAs(001) Substrates Grown via Molecular Beam Epitaxy;ACS Applied Electronic Materials;2022-01-18

2. Defects in Cd3As2 epilayers via molecular beam epitaxy and strategies for reducing them;Physical Review Materials;2019-12-09

3. Effects of excess carriers on charged defect concentrations in wide bandgap semiconductors;Journal of Applied Physics;2018-05-14

4. Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes;Journal of Physics D: Applied Physics;2017-11-22

5. Tailoring Heterovalent Interface Formation with Light;Scientific Reports;2017-08-17

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