Tailoring Heterovalent Interface Formation with Light
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-07670-2.pdf
Reference39 articles.
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3. Metze, G. M., Calawa, A. R. & Mavroides, J. G. An investigation of GaAs films grown by MBE at low substrate temperatures and growth rates. J. Vac. Sci. Technol. B 1, 166–169 (1983).
4. Ahmed, S. et al. Use of nonstoichiometry to form GaAs tunnel junctions. Appl. Phys. Lett. 71, 3667–3669 (1997).
5. Elman, B. et al. Low substrate temperature molecular beam epitaxial growth and the critical layer thickness of InGaAs Grown on GaAs. J. Appl. Phys. 70, 2634–2640 (1991).
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