Enhanced Optoelectronic Performance of Silicon Nanowire/SnS<sub>2</sub> Core-Shell Heterostructure With Defect Passivation in SnS<sub>2</sub> by UV Treatment-Reference-Cited by-同舟云学术

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Enhanced Optoelectronic Performance of Silicon Nanowire/SnS₂ Core-Shell Heterostructure With Defect Passivation in SnS₂ by UV Treatment

Published:2023-08 Issue:8 Volume:70 Page:4008-4013
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Das Sourav¹^ORCID,Pal Sourabh²^ORCID,Mandal Debabrata³,Banerji Pallab⁴,Chandra Amreesh³^ORCID,Basori Rabaya²^ORCID

Affiliation:

1. School of Nanoscience and Technology, Indian Institute of Technology Kharagpur, Kharagpur, India

2. Department of Advanced Technology and Development Center, Indian Institute of Technology Kharagpur, Kharagpur, India

3. Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur, India

4. Materials Science Center, Indian Institute of Technology Kharagpur, Kharagpur, India

Funder

Science and Engineering Research Board (SERB), Department of Science and Technology, Government of India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10194493/10153689.pdf?arnumber=10153689

Reference48 articles.

1. Electrical and Optical Characterization of MoS2 with Sulfur Vacancy Passivation by Treatment with Alkanethiol Molecules

2. High responsivity and broadband photodetector based on SnS2/Ag2S heterojunction

3. Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding

4. Broadband, Ultra-High-Responsive Monolayer MoS₂/SnS₂ Quantum-Dot-Based Mixed-Dimensional Photodetector

5. Unraveling the Mechanism of the 150-Fold Photocurrent Enhancement in Plasma-Treated 2D TMDs

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