(AlAs)0.5(GaAs)0.5fractional‐layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98056
Reference4 articles.
1. Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures
2. Structure of AlAs‐GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy
3. Surface superlattice formation in silicon inversion layers using 0.2-µm period grating-gate electrodes
4. (InAs)1(GaAs)1Layered Crystal Grown by MOCVD
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