Phonons at non-planar (III-V) semiconductor heterojunctions. II. GaSb/InAs (001)
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/6/i=3/a=002/pdf
Reference16 articles.
1. Interface roughness and the dispersion of confined LO phonons in GaAs/AlAs quantum wells
2. Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-AlxGa1-xAs (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption
3. Growth kinetics and step density in reflection high‐energy electron diffraction during molecular‐beam epitaxy
4. Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxy
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1. Influence of the lattice mismatch on the lattice vibration modes for InAs/GaSb superlattices;Applied Surface Science;2016-01
2. Molecular beam epitaxial growth of AlSb/InAsSb heterostructures;Applied Surface Science;2014-09
3. Interface vibrational modes and interface structure of CdSe/ZnTe superlattices;Physical Review B;1998-01-15
4. Intersubband Raman spectroscopy of two-dimensional electron gases in GaSb/InAs quantum wells;Semiconductor Science and Technology;1996-08-01
5. Effect of interfacial bonding on the structural and vibrational properties of InAs/GaSb superlattices;Physical Review B;1996-06-15
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