Selective epitaxial Si/SiGe growth forVTshift adjustment in highkpMOS devices-Reference-Cited by-同舟云学术

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Selective epitaxial Si/SiGe growth forVTshift adjustment in highkpMOS devices

Published:2006-12-05 Issue:1 Volume:22 Page:S110-S113
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Loo R,Sorada H,Inoue A,Lee B C,Hyun S,Jakschik S,Lujan G,Hoffmann T Y,Caymax M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Physical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structures

2. Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth

3. High performance Si/SiGe pMOSFETs fabricated in a standard CMOS process technology

4. Low power device technology with SiGe channel, HfSiON, and Poly-Si gate

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1. Synergistic silver-titania nano-composites: Optimized hetero-junction for enhanced water decontamination;Desalination and Water Treatment;2024-10

2. Improved Electrical Characteristics of Bulk FinFETs With SiGe Super-Lattice-Like Buried Channel;IEEE Electron Device Letters;2019-02

3. Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures;ECS Journal of Solid State Science and Technology;2018

4. Study on the effects of the Si capping layer growth conditions on the leakage current of Ge photodetector;Japanese Journal of Applied Physics;2017-09-28

5. (Invited) Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures;ECS Transactions;2017-08-01

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