Study on the effects of the Si capping layer growth conditions on the leakage current of Ge photodetector-Reference-Cited by-同舟云学术

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Study on the effects of the Si capping layer growth conditions on the leakage current of Ge photodetector

Published:2017-09-28 Issue:10 Volume:56 Page:102201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Okumura Shigekazu,Kinoshita Keizo,Fujikata Junichi,Simoyama Takasi,Ono Hideki,Tanaka Yu,Morito Ken,Horikawa Tsuyoshi,Mogami Tohru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=10/a=102201/pdf

Reference31 articles.

1. CMOS-integrated high-speed MSM germanium waveguide photodetector

2. CMOS-Integrated Optical Receivers for On-Chip Interconnects

3. CMOS Integrated Nanophotonics – Enabling Technology for Exascale Computing Systems

4. Monolithic Silicon Photonic DWDM Receiver for Terabit Data Communications

5. CMOS-Integrated 40GHz Germanium Waveguide Photodetector for On-chip Optical Interconnects

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1. Research on the leakage current at sidewall of mesa Ge/Si avalanche photodiode;AIP Advances;2021-07-01

2. High-Performance Microring Resonator Ge-on-Si Photodetectors by Optimizing Absorption Layer Length;IEEE Photonics Journal;2020-08

3. Planar GeSn photodiode for high-detectivity photodetection at 1550 nm;Applied Physics Letters;2020-07-06

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