Research on the leakage current at sidewall of mesa Ge/Si avalanche photodiode-Reference-Cited by-同舟云学术

Research on the leakage current at sidewall of mesa Ge/Si avalanche photodiode

Published:2021-07-01 Issue:7 Volume:11 Page:075320
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Zhang Junqin¹^ORCID,Lin Hongmei¹,Liu Meng¹,Yang Yintang¹

Affiliation:

1. Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0054242

Reference19 articles.

1. Single-photon detection beyond 1 μm: performance of commercially available germanium photodiodes

2. Ionization Rates of Holes and Electrons in Silicon

3. Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001)

4. High performance planar germanium-on-silicon single-photon avalanche diode detectors

5. Dark current analysis in high-speed germanium p-i-n waveguide photodetectors

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1. A peak enhancement of frequency response of waveguide integrated silicon-based germanium avalanche photodetector;Journal of Semiconductors;2024-07-01

2. Dependence of Ge/Si Avalanche Photodiode Performance on the Thickness and Doping Concentration of the Multiplication and Absorption Layers;Inorganics;2023-07-15

3. Configuration of the active region for the Ge-on-Si photodetector based on carrier mobility;Frontiers in Physics;2023-06-20