Strain relaxation of patterned Ge and SiGe layers on Si(0 0 1) substrates-Reference-Cited by-同舟云学术

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Strain relaxation of patterned Ge and SiGe layers on Si(0 0 1) substrates

Published:2006-12-05 Issue:1 Volume:22 Page:S132-S136
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Mochizuki Shogo,Sakai Akira,Nakatsuka Osamu,Kondo Hiroki,Yukawa Katsunori,Izunome Koji,Senda Takeshi,Toyoda Eiji,Ogawa Masaki,Zaima Shigeaki

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Fabrication technology of SiGe hetero-structures and their properties

2. Elimination of interface defects in mismatched epilayers by a reduction in growth area

3. Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areas

4. Raman investigations of elastic strain relief in Si1−xGexlayers on patterned silicon substrate

5. Defect-free strain relaxation in locally MBE-grown SiGe heterostructures

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective amorphization of SiGe in Si/SiGe nanostructures via high energy Si+ implant;Journal of Applied Physics;2022-07-21

2. Formation, Growth Mechanism and Electronic Structures of Ge Films on Si Substrates;Two-Dimensional Nanostructures for Energy-Related Applications;2016-09-30

3. Uniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates;Journal of Crystal Growth;2014-09

4. On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique;Journal of Crystal Growth;2013-09

5. Characterization of Local Strain Structures in Heteroepitaxial Ge1−x Sn x /Ge Microstructures by Using Microdiffraction Method;ECS Transactions;2013-08-31

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