On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. A Logic Nanotechnology Featuring Strained-Silicon
2. Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers
3. Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors
4. High Quality Ge Virtual Substrates on Si Wafers with Standard STI Patterning
5. Strain relaxation of patterned Ge and SiGe layers on Si(0 0 1) substrates
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Asymmetric, compressive, SiGe epilayers on Si grown by lateral liquid-phase epitaxy utilizing a distinction between dislocation nucleation and glide critical thicknesses;Journal of Crystal Growth;2018-01
2. Local anisotropic strain evaluation in thin Ge epitaxial film using SiGe stressor template grown on Ge substrate by selective ion implantation;Japanese Journal of Applied Physics;2017-10-24
3. Pattern-dependent anisotropic stress evaluation in SiGe epitaxially grown on a Si substrate with selective Ar+ion implantation using oil-immersion Raman spectroscopy;Japanese Journal of Applied Physics;2017-04-03
4. (Invited) Anisotropic Strain Introduction into Si/Ge Hetero Structures;ECS Transactions;2016-08-18
5. Uniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates;Journal of Crystal Growth;2014-09
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