Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3245327
Reference33 articles.
1. Ge based high performance nanoscale MOSFETs
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4. Improved Ge Surface Passivation With Ultrathin $ \hbox{SiO}_{X}$ Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack
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