Device characteristics of InSnO thin-film transistors with a modulated channel
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Indium Oxide Thin-Film Transistors Fabricated by RF Sputtering at Room Temperature
2. A study of the specific contact resistance and channel resistivity of amorphous IZO thin film transistors with IZO source–drain metallization
3. Modeling of low-voltage oxide-based electric-double-layer thin-film transistors fabricated at room temperature
4. Enhancement of a-IZO TTFT Performance by Using Y[sub 2]O[sub 3]∕Al[sub 2]O[sub 3] Bilayer Dielectrics
5. High-performance transparent thin-film transistor based on Y2O3/In2O3 with low interface traps
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical instabilities in amorphous Si-Zn-sn-O thin film transistors under ultra-violet irradiation depending on oxygen content;Solid-State Electronics;2023-02
2. Fabrication and Characteristics of High Mobility InSnZnO Thin Film Transistors;Journal of Nanoscience and Nanotechnology;2016-05-01
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