Enhancement of a-IZO TTFT Performance by Using Y[sub 2]O[sub 3]∕Al[sub 2]O[sub 3] Bilayer Dielectrics-Reference-Cited by-同舟云学术

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Enhancement of a-IZO TTFT Performance by Using Y[sub 2]O[sub 3]∕Al[sub 2]O[sub 3] Bilayer Dielectrics

Published:2011 Issue:2 Volume:14 Page:H88
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Chen Ai Hua,Liang Ling Yan,Zhang Hai Zhong,Liu Zhi Min,Ye Xiao Juan,Yu Zheng,Cao Hong Tao

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference32 articles.

1. ZnO-based transparent thin-film transistors

2. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

3. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

4. High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors

5. Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature

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1. Enhancing the electrical performance of InAs nanowire field-effect transistors by improving the surface and interface properties by coating with thermally oxidized Y₂O₃;Nanoscale;2022

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3. Cathodoluminescence degradation of Y2O3:Dy3+ nanophosphor for field emission displays;Journal of Vacuum Science & Technology A;2019-12

4. Structural, optical, and XPS studies of doped yttria for superior water splitting under visible light illumination;Journal of Electroanalytical Chemistry;2019-09

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