Quasi-ballistic corrections to base transit time in bipolar transistors
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/6/i=5/a=017/pdf
Reference6 articles.
1. Current transport in narrow-base transistors
2. Numerical simulation of hot-carrier transport in silicon bipolar transistors
3. Quasi-ballistic corrections to base transit time in bipolar transistors
4. Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region
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