Extended velocity overshoot in GaAs HBT
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Quasi-ballistic corrections to base transit time in bipolar transistors
2. Band structure engineering of hot-carrier transport in SiGe heterojunction bipolar transistors
3. Breakdown voltage in ultra-thin pin diodes
4. A comparison of transient velocity overshoot in Si and GaAs structures
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Introduction;Graduate Texts in Physics;2010
2. Transistors;Graduate Texts in Physics;2010
3. Reduction of the base-collector capacitance in InP/GaInAs heterojunction bipolar transistors due to electron velocity modulation;IEEE Transactions on Electron Devices;1999-04
4. A theory for the nonlinear response of high power p-i-n photodetectors;Journal of Applied Physics;1998-07
5. Modelling of the influence of velocity overshoot on the cut-off frequency in Si and GaAs heterojunction bipolar transistors;Semiconductor Science and Technology;1996-06-01
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