Effects of substrate type on the characteristics of GaN epitaxial films grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Effects of substrate type on the characteristics of GaN epitaxial films grown by molecular beam epitaxy

Published:1997-07-01 Issue:7 Volume:12 Page:917-920
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Cheng T S,Foxon C T,Ren G B,Orton J W,Melnik Yu V,Nikitina I P,Nikolaev A E,Novikov S V,Dmitriev V A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. Emerging gallium nitride based devices

3. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

4. The growth and properties of group III nitrides

5. Molecular beam epitaxy growth and properties of GaN, AlxGa1−xN, and AlN on GaN/SiC substrates

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1. Two-Step Deposition of an Ultrathin GaN Film on a Monolayer MoS₂ Template;ACS Applied Materials & Interfaces;2022-04-04

2. XPS investigation of ion beam induced conversion of GaAs(001) surface into GaN overlayer;Applied Surface Science;2009-10

3. Influence of double buffer layers on properties of Ga-polarity GaN films grown by rf-plasma assisted molecular-beam epitaxy;Materials Letters;2003-05

4. Epitaxial growth and structure of III-V nitride thin films;Handbook of Thin Films;2002

5. Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy;Physical Review B;2000-12-15

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