Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.16826/fulltext
Reference47 articles.
1. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
2. Growth kinetics and morphology of high quality AlN grown on Si(111) by plasma-assisted molecular beam epitaxy
3. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
4. Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy
5. Surface lifetimes of Ga and growth behavior on GaN (0001) surfaces during molecular beam epitaxy
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