Epitaxial growth and structure of III-V nitride thin films-Reference-Cited by-同舟云学术

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Epitaxial growth and structure of III-V nitride thin films

Published:2002 Issue: Volume: Page:57-115
ISSN:
Container-title:Handbook of Thin Films
language:
Short-container-title:

Author:

Doppalapudi Dharanipal,D. Moustakas Theodore

Publisher

Elsevier

Reference342 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Gallium Nitride (GaN) I,1998

4. Gallium Nitride (GaN) IL,1999

5. Über die Kristallstrukturen von Cu3N, GaN und InN Metallamide und Metallnitride

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultraviolet optoelectronic devices based on AIGaN alloys grown by molecular beam epitaxy;MRS Communications;2016-08-15

2. Substrates for gallium nitride epitaxy;Materials Science and Engineering: R: Reports;2002-04

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