Characterization of a superlattice with an enlarged well by synchrotron radiation and photoluminescence-Reference-Cited by-同舟云学术

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Characterization of a superlattice with an enlarged well by synchrotron radiation and photoluminescence

Published:1992-03-01 Issue:3 Volume:7 Page:304-310
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Baumbach G T,Oelgart G,Bruhl H G,Pietsch U,Tuncel E,Genoud F M,Martin D,Reinhart F -K,Lengeler B

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/7/i=3/a=003/pdf

Reference19 articles.

1. Dynamics of photoexcited carriers sinking into an enlarged well in a GaAs/AlAs short-period superlattice

2. Observation of Carrier Localization in Intentionally Disordered Gaas/Gaalas Superlattices

3. Photoluminescence of disorder-induced localized states in GaAs/AlxGa1−xAs superlattices

4. Optical spectroscopy of purposely disordered GaAs/AlGaAs superlattices

5. X‐ray diffraction study of intentionally disordered GaAlAs‐GaAs superlattices

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enlarged quantum well in a semiconductor superlattice studied by depth resolved grazing incidence x‐ray diffraction;Journal of Applied Physics;1995-09

2. Influence of Al content in the barrier on the optical properties of GaAs/AlxGa1−xAs (x=0.1–1) multiple-quantum-well structures;Physical Review B;1992-09-15

3. X-ray scattering by gratings and dots;Springer Tracts in Modern Physics

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