X‐ray diffraction study of intentionally disordered GaAlAs‐GaAs superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339821
Reference11 articles.
1. X-ray diffraction study of a one-dimensional GaAs–AlAs superlattice
2. Some aspects of the X-ray structural characterization of (Ga1−xAlxAs)n1(GaAs)n2/GaAs(001) superlattices
3. Growth conditions and characterization of InGaAs/GaAs strained layers superlattices
4. Smooth and coherent layers of GaAs and AlAs grown by molecular beam epitaxy
5. Calcul du profil des couches minces déposées par évaporation sous vide á partir de creusets cylindriques
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4. Influence of dislocations on photoluminescence of InGaN∕GaN multiple quantum wells;Applied Physics Letters;2005-08-15
5. Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells;Journal of Applied Crystallography;2004-05-11
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