Characterization of periodicity fluctuations in InGaN/GaN MQWs by the kinematical simulation of X-ray diffraction-Reference-Cited by-同舟云学术

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Characterization of periodicity fluctuations in InGaN/GaN MQWs by the kinematical simulation of X-ray diffraction

Published:2019-03-13 Issue:4 Volume:12 Page:045502
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Li Yangfeng^ORCID,Die Junhui,Yan Shen,Deng Zhen,Ma Ziguang,Wang Lu,Jia Haiqiang,Wang Wenxin,Jiang Yang,Chen Hong

Funder

Innovative clean-energy research and application program of Beijing Municipal Science and Technology Commission

National Natural Science Foundation of China

The National Key Technology R&D Program of China

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://iopscience.iop.org/article/10.7567/1882-0786/ab0540/pdf

Reference23 articles.

1. X-ray diffraction of III-nitrides

2. Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

3. Direct measurement of twist mosaic in GaN epitaxial films as a function of growth temperature

4. Temperature-dependent photoluminescence in light-emitting diodes

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1. Effects of TMAl predose time on the quality of submicron-thick GaN on Si;Vacuum;2024-08

2. III-Nitride Materials: Properties, Growth, and Applications;Crystals;2024-04-23

3. High-Efficiency InGaN Photo Cell Irradiated by 532 nm Laser with AlGaN Electron Blocking Layer;ECS Journal of Solid State Science and Technology;2023-07-01

4. Realizing Single Chip White Light InGaN LED via Dual-Wavelength Multiple Quantum Wells;Materials;2022-06-03

5. The influence of temperature of nitridation and AlN buffer layer on N-polar GaN;Materials Science in Semiconductor Processing;2022-04

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