Dynamics of photoexcited carriers sinking into an enlarged well in a GaAs/AlAs short-period superlattice
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.34.9019/fulltext
Reference10 articles.
1. Recombination Enhancement due to Carrier Localization in Quantum Well Structures
2. Time-Resolved Photoluminescence of Two-Dimensional Hot Carriers in GaAs-AlGaAs Heterostructures
3. Picosecond time-resolved study of excitons in GaAs-A1As multi-quantum-well structures
4. Room‐temperature photoluminescence times in a GaAs/AlxGa1−xAs molecular beam epitaxy multiple quantum well structure
5. Direct Observation of Superlattice Formation in a Semiconductor Heterostructure
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2. Effect of the Photoquenching ofEL2 in GaAs Substrate on the Piezoelectric Photothermal and Surface Photovoltage Spectra of a GaAs Single Quantum Well Confined by GaAs/AlAs Short-Period Superlattices;Japanese Journal of Applied Physics;2008-01-18
3. Vertical transport in all-binary GaAs/AlAs short-period superlattices and carrier trapping and detrapping dynamics by different quantum wells;physica status solidi (b);2007-08
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