PMOSFET hot-carrier damage: oxide charge and interface states
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/7/i=3B/a=153/pdf
Reference10 articles.
1. Hot-carrier drifts in submicrometer p-channel MOSFET's
2. Effects of hot-carrier trapping in n- and p-channel MOSFET's
3. Hot-electron-induced punchthrough (HEIP) effect in submicrometer PMOSFET's
4. A lifetime prediction method for hot-carrier degradation in surface-channel p-MOS devices
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