Hot-carrier drifts in submicrometer p-channel MOSFET's-Reference-Cited by-同舟云学术

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Hot-carrier drifts in submicrometer p-channel MOSFET's

Published:1987-05 Issue:5 Volume:8 Page:208-210
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Weber W.,Lau F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31989/01487155.pdf?arnumber=1487155

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chapter 4 Hot carrier injections in SIO2 and related instabilities in submicrometer mosfets;New Insulators, Devices and Radiation Effects;1999

2. Hot-carrier injections in SiO2;Microelectronics Reliability;1998-02

3. Characterization of the gate oxide thickness and the channel length dependencies of hot-carrier degradation in LDD p-MOSFETs;Solid-State Electronics;1995-01

4. Lifetime prediction methods for p-MOSFET's: a comparative study of standard and charge-pumping lifetime criteria;IEEE Transactions on Electron Devices;1995

5. A novel hot carrier reliability monitor for LDD p-MOSFETs;Solid-State Electronics;1994-12

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