Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates-Reference-Cited by-同舟云学术

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Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates

Published:1993-06-02 Issue:6 Volume:8 Page:998-1010
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Gibbon M,Stagg J P,Cureton C G,Thrush E J,Jones C J,Mallard R E,Pritchard R E,Collis N,Chew A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/8/i=6/a=006/pdf

Reference12 articles.

1. Selective area epitaxy and growth over patterned substrates by chemical beam epitaxy

2. Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBE

3. Lateral and longitudinal patterning of semiconductor structures by crystal growth on nonplanar and dielectric-masked GaAs substrates: application to thickness-modulated waveguide structures

4. High-speed (10 Gbit/s) and low-drive-voltage (1 V peak to peak) InGaAs/InGaAsP MQW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

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