Large-area 2D selective area growth for photonic crystal surface emitting lasers-Reference-Cited by-同舟云学术

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Large-area 2D selective area growth for photonic crystal surface emitting lasers

Published:2023-02 Issue: Volume:603 Page:127036
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zhao Xingyu,McKenzie Adam F.,Munro Connor W.,Hill Katherine J.,Kim Daehyun,Bayliss Sam L.,Gerrard Neil D.,MacLaren Donald A.,Hogg Richard A.

Funder

Royal Commission for the Exhibition of 1851

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. Characteristics of GaN-based photonic crystal surface emitting lasers;Lu;Appl. Phys. Lett.,2008

2. Band structure and waveguide modelling of epitaxially regrown photonic crystal surface-emitting lasers;Taylor;J. Phys. D Appl. Phys.,2013

3. Watt-class high-power, high-beam-quality photonic-crystal lasers;Hirose;Nature Photon.,2014

4. Double-lattice photonic-crystal resonators enabling high-brightness semiconductor lasers with symmetric narrow-divergence beams;Yoshida;Nature Mater.,2019

5. 1.5 μm epitaxially regrown photonic crystal surface emitting laser diode;Bian;IEEE Photon. Technol. Lett.,2020

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and optimization of high-contrast gratings for multispectral VCSEL-SOI laser sources;COMPUT OPT;2024

2. Progress in analytical solutions for high order harmonic generation in semiconductor superlattice multipliers;Optical and Quantum Electronics;2023-11-10

3. Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition;Nanomaterials;2023-08-22

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