Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique-Reference-Cited by-同舟云学术

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

Published:2022-09 Issue:5: Lidars and Photonic Radars Volume:28 Page:1-9
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Kizilkan Ekin¹^ORCID,Karaca Utku¹^ORCID,Pesic Vladimir¹^ORCID,Lee Myung-Jae²^ORCID,Bruschini Claudio¹^ORCID,SpringThorpe Anthony J.³,Walker Alexandre W.³^ORCID,Flueraru Costel³,Pitts Oliver J.³^ORCID,Charbon Edoardo¹^ORCID

Affiliation:

1. Advanced Quantum Architecture Laboratory (AQUA), École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland

2. Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, South Korea

3. Advanced Electronics and Photonics Research Centre-National Research Council of Canada, Ottawa, ON, Canada

Funder

National Research Council Canada

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/2944/9613808/09743206.pdf?arnumber=9743206

Reference34 articles.

1. Room temperature quantum key distribution characteristics of low-noise InGaAs/InP single-photon avalanche diode

2. A Low-noise CMOS SPAD Pixel with 12.1 ps SPTR and 3 ns Dead Time

3. Fast Active Quenching Circuit for Reducing Avalanche Charge and Afterpulsing in InGaAs/InP Single-Photon Avalanche Diode

4. Ionization coefficients in semiconductors: A nonlocalized property

5. Active Area Uniformity of InGaAs/InP Single-Photon Avalanche Diodes

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1. Recent advances in InGaAs/InP single-photon detectors;Measurement Science and Technology;2024-09-13

2. Edge Breakdown Suppression in Avalanche Photodiodes Using an Attached Step Guard Ring;IEEE Transactions on Electron Devices;2024-05

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4. Extended Temperature Modeling of InGaAs/InP SPADs;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11

5. Afterpulsing in Ge-on-Si Single-Photon Avalanche Diodes;IEEE Photonics Technology Letters;2023-09-01