A Low-noise CMOS SPAD Pixel with 12.1 ps SPTR and 3 ns Dead Time-Reference-Cited by-同舟云学术

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A Low-noise CMOS SPAD Pixel with 12.1 ps SPTR and 3 ns Dead Time

Published:2021 Issue: Volume: Page:1-1
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Gramuglia Francesco,Wu Ming-Lo,Bruschini Claudio,Lee Myung-Jae,Charbon Edoardo

Funder

Schweizerischer Nationalfonds zur Frderung der Wissenschaftlichen Forschung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/2944/4481213/09451600.pdf?arnumber=9451600

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of small single photon avalanche diode fabricated using standard 180 nm CMOS process for digital SiPM;Nuclear Engineering and Technology;2024-08

2. Comparative Analysis of Free-Running and Gating Imaging Modes of SPAD Sensors;Photonics;2024-07-31

3. Temperature-Dependent Noise Performance of Single-Photon Avalanche Diodes and Active Quenching Circuits in 180-nm HV CMOS;2024 47th MIPRO ICT and Electronics Convention (MIPRO);2024-05-20

4. From 3D to 5D: Computational light-in-flight imaging via an SPAD camera;Optics and Lasers in Engineering;2024-05

5. Optimizing time resolution and power consumption in a current-mode circuit for SiPMs;Journal of Instrumentation;2024-04-01

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