Characterization of small single photon avalanche diode fabricated using standard 180 nm CMOS process for digital SiPM-Reference-Cited by-同舟云学术

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Characterization of small single photon avalanche diode fabricated using standard 180 nm CMOS process for digital SiPM

Published:2024-08 Issue:8 Volume:56 Page:3076-3083
ISSN:1738-5733
Container-title:Nuclear Engineering and Technology
language:en
Short-container-title:Nuclear Engineering and Technology

Author:

Oh Jinseok,Jeong Hakcheon,Lee Min Sun,Kwon Inyong^ORCID

Funder

Ministry of Science, ICT and Future Planning

National Research Foundation of Korea

Korea Ministry of Science and ICT

Publisher

Elsevier BV

Reference34 articles.

1. Characterization of a commercially available large area, high detection efficiency single-photon avalanche diode;Stipcevic;J. Lightwave Technol.,2013

2. Progress in quenching circuits for single photon avalanche diodes;Gallivanoni;IEEE Trans. Nucl. Sci.,2010

3. Progress in silicon single-photon avalanche diodes;Ghioni;IEEE J. Sel. Top. Quant. Electron.,2007

4. Effect of electric field on primary dark pulses in spads for advanced radiation detection applications;Lim;Nucl. Eng. Technol.,2021

5. Radiation-hardened sensor interface circuit for monitoring severe accidents in nuclear power plants;Jeon;IEEE Trans. Nucl. Sci.,2020

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