Afterpulsing in Ge-on-Si Single-Photon Avalanche Diodes-Reference-Cited by-同舟云学术

Afterpulsing in Ge-on-Si Single-Photon Avalanche Diodes

Published:2023-09-01 Issue:17 Volume:35 Page:959-962
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Yi Xin¹^ORCID,Greener Zoë¹,Fleming Fiona¹^ORCID,Kirdoda Jarosław²,Dumas Derek C. S.²,Saalbach Lisa¹^ORCID,Muir Dave A. S.¹,Ferre-Llin Lourdes²,Millar Ross W.²,Paul Douglas J.²^ORCID,Buller Gerald S.¹

Affiliation:

1. School of Engineering and Physical Sciences, Institute of Photonics and Quantum Sciences, Heriot-Watt University, Edinburgh, U.K.

2. James Watt School of Engineering, University of Glasgow, Glasgow, U.K.

Funder

Royal Academy of Engineering

Innovate U.K.

Defence Science and Technology Laboratory

Engineering and Physical Sciences Research Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/68/10171961/10163807.pdf?arnumber=10163807

Reference27 articles.

1. InGaAs/InP Single-Photon Detector Gated at 1.3 GHz With 1.5% Afterpulsing

2. Free-running, room temperature operation of an InGaAs/InP single-photon avalanche diode

3. Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates

4. Ge-on-Si single-photon avalanche diode detectors for short-wave infrared wavelengths

5. Design and Performance of an InGaAs–InP Single-Photon Avalanche Diode Detector

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1. Surface-normal illuminated pseudo-planar Ge-on-Si avalanche photodiodes with high gain and low noise;Optics Express;2024-05-13

2. Decoupling the dark count rate contributions in Ge-on-Si single photon avalanche diodes;Quantum Sensing and Nano Electronics and Photonics XX;2024-03-08