The role of the arsenic source in selective epitaxial growth of GaAs and AlGaAs by MOMBE-Reference-Cited by-同舟云学术

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The role of the arsenic source in selective epitaxial growth of GaAs and AlGaAs by MOMBE

Published:1993-06-02 Issue:6 Volume:8 Page:979-983
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Abernathy C R,Pearton S J,Ren F,Wisk P W,Lothian J R,Bohling D A,Muhr G T

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/8/i=6/a=003/pdf

Reference11 articles.

1. Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source

2. Selective growth of GaAs in the MOMBE and MOCVD systems

3. MOMBE and MOVPE—A comparison of growth techniques

4. In-situ selective-area epitaxy of GaAs using a GaAs oxide layer as a mask

5. Selective growth of p+-GaAs by metalorganic molecular beam epitaxy

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1. As Doping in (Hg,Cd)Te: An Alternative Point of View;Journal of Electronic Materials;2008-04-23

2. Low temperature atomic layer growth of aluminum nitride on Si(100) using dimethylethylamine alane and 1,1-dimethylhydrazine;Thin Solid Films;2000-09

3. Selective-area metalorganic molecular beam epitaxy of GaAs using metalorganic chloride gallium precursors;Journal of Crystal Growth;1997-12

4. Improved stability of C-doped GaAs grown by chemical beam epitaxy for heterojunction bipolar transistor applications;Journal of Crystal Growth;1996-01

5. Molecular Processes for Surface Selective Growth on Patterned Substrates; An Investigation of CBE ALAS Deposition;Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates;1995

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