Molecular Processes for Surface Selective Growth on Patterned Substrates; An Investigation of CBE ALAS Deposition
Author:
Publisher
Springer Netherlands
Link
http://link.springer.com/content/pdf/10.1007/978-94-011-0341-1_22
Reference13 articles.
1. Tsang, W.T. (1993) Selective area epitaxy and etching by chemical beam epitaxy, Semicon. Sci. Technol. 8 1016–1022.
2. Heinecke, H., Milde, A., Baur, B., Matz, R. (1993) Selective growth of III/V semiconductors in chemical beam epitaxy, Semicon. Sci. Technol. 8 1023–1031.
3. Okamoto, A and Onata, K (1987) Selective area growth by MBE, Appl. Phys. Lett. 51 1512–1515.
4. Kayser, O (1991) Selective growth of InP/InGaAs in LP-MOVPE and MOMBE/CBE J. Cryst. Gr. 107 989–998.
5. Davies, G.J., Skevington, P.J., French, C.L. and Foord, J.S. (1992) Selected area growth of III-V compound semiconductors by chemical beam epitaxy, J. Cryst. Gr. 120 369–375.
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