Characterization of p-GaN1−xAsx/n-GaN PN junction diodes-Reference-Cited by-同舟云学术

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Characterization of p-GaN1−xAsx/n-GaN PN junction diodes

Published:2016-05-12 Issue:6 Volume:31 Page:065020
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Qian H,Lee K B,Vajargah S Hosseini,Novikov S V,Guiney I,Zhang S,Zaidi Z H,Jiang S,Wallis D J,Foxon C T,Humphreys C J,Houston P A

Funder

Engineering and Physical Sciences Research Council

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=6/a=065020/pdf

Reference19 articles.

1. Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8eV for solar energy conversion devices

2. Doping of GaN1−xAsx with high As content

3. Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films

4. The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN

5. Enhancing P-type Conductivity in Mg-doped GaN Using Oxygen and Nitrogen Plasma Activation

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