Author:
Novikov S.V.,Staddon C.R.,Foxon C.T.,Yu K.M.,Broesler R.,Hawkridge M.,Liliental-Weber Z.,Denlinger J.,Demchenko I.,Luckert F.,Edwards P.R.,Martin R.W.,Walukiewicz W.
Funder
EPSRC
Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Valence band hybridization inN-richGaN1−xAsxalloys
2. W. Walukiewicz, K. Alberi, J. Wu, W. Shan, K.M. Yu, J.W. Ager III, in: Physics of dilute III–V nitride semiconductors and material systems: physics and technology, Ayse Erol (Ed.), Springer-Verlag, Berlin-Heidelberg 2008 (Chapter 3).
3. Epitaxial GaN1−yAsy layers with high As content grown by metalorganic vapor phase epitaxy and their band gap energy
4. Effects of arsenic in gas-source molecular beam epitaxy
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