High pressure studies of electron mobility in heavily doped GaAs: fitting of the absolute value-Reference-Cited by-同舟云学术

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High pressure studies of electron mobility in heavily doped GaAs: fitting of the absolute value

Published:1991-10-01 Issue:10 Volume:6 Page:969-972
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Dmowski L,Wisniewski P,Skierbiszewski C,Suski T,Wel P J van der,Singleton J,Kossut J,Ploog K,Harris J J

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/6/i=10/a=003/pdf

Reference11 articles.

1. Investigation of theDXcenter in heavily dopedn-GaAs

2. Evidence against the negative-charge-state model for theDXcenter inn-type GaAs

3. Pressure dependence ofDXcenter mobility in highly doped GaAs

4. Pressure dependence of electron concentration and mobility in GaAs:Si-effects of on-site and inter-site interactions within a system of DX centres

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spatial correlation effects of charged impurities on electron mobility in δ-doped quantum barriers;Superlattices and Microstructures;1997-03

2. The effect of DX centres on mobility in heavily doped n-GaAs calculated by Monte Carlo simulations;Semiconductor Science and Technology;1993-02-01

3. Effect of spatial correlation ofDXcenters on the mobility in heavily dopedn‐type GaAs;Applied Physics Letters;1992-04-20

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