Pressure dependence ofDXcenter mobility in highly doped GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101609
Reference11 articles.
1. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
2. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
3. Evidence against the negative-charge-state model for theDXcenter inn-type GaAs
4. Investigation of theDXcenter in heavily dopedn-GaAs
5. Chadi, Chang, and Walukiewicz reply
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