Relocation of surface acoustic waves in AlxGa1−xN/GaN bilayer films on SiC substrates
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Preparation of aluminum nitride thin films by reactive sputtering and their applications to GHz‐band surface acoustic wave devices
2. Electromechanical coupling coefficient for surface acoustic waves in single-crystal bulk aluminum nitride
3. Superhigh-frequency surface-acoustic-wave transducers using AlN layers grown on SiC substrates
4. Surface-Acoustic-Wave Delay Line at 24 GHz Using the Guided Rayleigh Mode in AlN/SiC Structures
5. Surface-acoustic-wave transducers for the extremely-high-frequency range using AlN/SiC(0001)
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Improved electromigration reliability of surface acoustic wave devices using Ti/Al-Mo/Ti/Al-Mo electrodes;Rare Metals;2009-12
2. Improvement in Power Durability of Al Electrode Films Used in SAW Devices by Zr Additive and Ti Underlayer;Journal of Electronic Materials;2007-10-30
3. Relocation effect and polarization mixing of surface acoustic waves in AlN-GaN bilayers on Al2O3(0001) substrates;Journal of Applied Physics;2007-06
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