Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/30/i=12/a=125016/pdf
Reference42 articles.
1. New insights in the passivation of high-k/InP through interface characterization and metal–oxide–semiconductor field effect transistor demonstration: Impact of crystal orientation
2. Effect of doping on the forward current-transport mechanisms in a metal–insulator–semiconductor contact to InP:Zn grown by metal organic vapor phase epitaxy
3. Temperature dependence of the electrical characteristics of Yb/p‐InP tunnel metal‐insulator‐semiconductor junctions
4. Surface defects and Fermi‐level pinning in InP
5. Fermi‐level pinning and chemical structure of InP–metal interfaces
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Annealing temperature effect on structural, electronic features and current transport process of Au/CoPc/undoped-InP MPS-type Schottky structure;Journal of Molecular Structure;2023-12
2. Metal oxide semiconductor-based Schottky diodes: a review of recent advances;Materials Research Express;2020-03-01
3. Schottky junction interfacial properties at high temperature: A case of AgNWs embedded metal oxide/p-Si;Physica B: Condensed Matter;2018-05
4. Anomalous capacitance in temperature and frequency characteristics of a TiW/p-InP Schottky barrier diode;Semiconductor Science and Technology;2016-05-12
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