Effect of doping on the forward current-transport mechanisms in a metal–insulator–semiconductor contact to InP:Zn grown by metal organic vapor phase epitaxy-Reference-Cited by-同舟云学术

Effect of doping on the forward current-transport mechanisms in a metal–insulator–semiconductor contact to InP:Zn grown by metal organic vapor phase epitaxy

Published:1998-04 Issue:4 Volume:42 Page:477-485
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Cova P.,Singh A.,Medina A.,Masut R.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. High‐speed InP optoelectronic switch with a tandem structure

2. High‐efficiency indium tin oxide/indium phosphide solar cells

3. InP solar cells for use in space

4. Stringfellow, G. B., Organometallic Vapor-Phase Epitaxy, Academic Press, London, 1989

5. Cova, P., Croissance et caractérisation de InP fabriquépar LP-MOVPE. Ph.D. Thesis, École Polytechnique de Montréal, Universitéde Montréal, Canada, 1992

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