Fermi‐level pinning and chemical structure of InP–metal interfaces-Reference-Cited by-同舟云学术

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Fermi‐level pinning and chemical structure of InP–metal interfaces

Published:1982-07 Issue:2 Volume:21 Page:564-569
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Brillson L. J.,Brucker C. F.,Katnani A. D.,Stoffel N. G.,Daniels R.,Margaritondo G.

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.571764

Cited by 117 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Defects at nanoscale semiconductor interfaces: Challenges and opportunities;Journal of Materials Research;2023-11-29

4. Interfacial characteristics of Au/Al2O3/InP metal-insulator-semiconductor diodes;AIP Advances;2018-09

5. Electrical Characterization of Graphite/InP Schottky Diodes by I–V–T and C–V Methods;Journal of Electronic Materials;2018-02-20

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