The effect of n- and p-type doping on coherent phonons in GaN
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/25/i=20/a=205404/pdf
Reference24 articles.
1. Free-carrier and phonon properties ofn- andp-type hexagonal GaN films measured by infrared ellipsometry
2. The influence of phonons on the optical properties of GaN
3. Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density
4. Raman scattering from LO phonon‐plasmon coupled modes in gallium nitride
5. Polarized Raman spectra in GaN
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