A molecular dynamics study of the -SiC/Si(001) interface
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/14/i=48/a=348/pdf
Reference7 articles.
1. Couche épitaxique mince sur un substrat semi-infini: Role du désaccord paramétrique et de l'épaisseur sur les distortions élastiques
2. Influence of stress and defects on the silicon-terminated SiC(001) surface structure
3. Ab initioStudy of Misfit Dislocations at theSiC/Si(001)Interface
4. Native defect properties in β-SiC: Ab initio and empirical potential calculations
5. Structural defects in 3C–SiC grown on Si by supersonic jet epitaxy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. An environment-dependent interatomic potential for silicon carbide: calculation of bulk properties, high-pressure phases, point and extended defects, and amorphous structures;Journal of Physics: Condensed Matter;2009-12-21
2. Atomic structure of misfit dislocations at InAs/GaAs(110);Journal of Physics: Condensed Matter;2008-05-09
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