Influence of stress and defects on the silicon-terminated SiC(001) surface structure
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.12255/fulltext
Reference24 articles.
1. Structure and Properties of Cubic Silicon Carbide (100) Surfaces: A Review
2. Atomic and Electronic Structure of SiC Surfaces from ab-initio Calculations
3. Structural Determination ofβ-SiC(100)-c(2×2)from C-1sSurface-Core-Exciton and Si-2pAbsorption
4. First-principles calculations of β-SiC(001) surfaces
5. Reconstruction and Thermal Stability of the Cubic SiC (001) Surfaces
Cited by 70 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Revisiting the Strongly Correlated Si-Terminated 3C-SiC(001)-p(2 × 1) Reconstructed Surface with Single- and Multiconfigurational Methods;The Journal of Physical Chemistry C;2023-11-24
2. Relation between work function and structural properties of triangular defects in 4H-SiC epitaxial layer: Kelvin probe force microscopic and spectroscopic analyses;Nanoscale;2020
3. Ab Initio Simulations of Semiconductor Surfaces and Interfaces;Springer Handbook of Surface Science;2020
4. Unusual Mechanism Behind Enhanced Photocatalytic Activity and Surface Passivation of SiC(0001) via Forming Heterostructure with a MoS2 Monolayer;The Journal of Physical Chemistry C;2019-11-21
5. Comment on “Adsorption of hydrogen and hydrocarbon molecules on SiC(001)” by Pollmann et al. (Surf. Sci. Rep. 69 (2014) 55–104);Surface Science;2016-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3