An environment-dependent interatomic potential for silicon carbide: calculation of bulk properties, high-pressure phases, point and extended defects, and amorphous structures-Reference-Cited by-同舟云学术

An environment-dependent interatomic potential for silicon carbide: calculation of bulk properties, high-pressure phases, point and extended defects, and amorphous structures

Published:2009-12-21 Issue:3 Volume:22 Page:035802
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Lucas G,Bertolus M,Pizzagalli L

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/22/i=3/a=035802/pdf

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4. A molecular dynamics study of the -SiC/Si(001) interface

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